Arcticstoat notes an announcement from IBM that, along with electronic components partners, they have produced the first working sample of a SRAM cell built on a 22nm fabrication process. indisputable to the article, this represents the next generation after 32nm process chips and won't be in product for some years. "The scientific know-how was full-blown with several partners, including AMD, Toshiba, STMicroelectronics and Freescale, as well as the College of Nanoscale Science and Engineering, where IBM performs a lot of its semiconductor research. IBM says that the cell's evolvement complicated 'novel fabrication processes,' including high-NA immersion lithography..., high-K metal gate stacks, extremely thin silicide, damascene copper contacts, and elderly activation techniques."

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